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Atomic Layer Etching Using a Novel Radical Generation Module

To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profile distortion have been reported during etching usi...

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Detalles Bibliográficos
Autores principales: Jung, Junho, Kim, Kyongnam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222077/
https://www.ncbi.nlm.nih.gov/pubmed/37241238
http://dx.doi.org/10.3390/ma16103611