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Atomic Layer Etching Using a Novel Radical Generation Module
To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profile distortion have been reported during etching usi...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222077/ https://www.ncbi.nlm.nih.gov/pubmed/37241238 http://dx.doi.org/10.3390/ma16103611 |