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An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices
The stress-induced leakage current (SILC) degradation of partially depleted silicon in insulator (PDSOI) devices under constant voltage stress (CVS) was studied. Firstly, the behaviors of threshold voltage degradation and SILC degradation of H-gate PDSOI devices under constant voltage stress were st...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222930/ https://www.ncbi.nlm.nih.gov/pubmed/37241707 http://dx.doi.org/10.3390/mi14051084 |
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author | Lu, Yong Liu, Hongxia |
author_facet | Lu, Yong Liu, Hongxia |
author_sort | Lu, Yong |
collection | PubMed |
description | The stress-induced leakage current (SILC) degradation of partially depleted silicon in insulator (PDSOI) devices under constant voltage stress (CVS) was studied. Firstly, the behaviors of threshold voltage degradation and SILC degradation of H-gate PDSOI devices under constant voltage stress were studied. It was found that both the threshold voltage degradation and SILC degradation of the device are power functions of the stress time, and the linear behavior between SILC degradation and threshold voltage degradation is good. Secondly, the soft breakdown characteristics of the PDSOI devices were studied under CVS. Thirdly, the effects of different gate stresses and different channel lengths on the threshold voltage degradation and SILC degradation of the device were studied. The results showed SILC degradation of the device under positive CVS and SILC degradation of the device under negative CVS. The shorter the channel length of the device was, the greater the SILC degradation of the device was. Finally, the influence of the floating effect on the SILC degradation of the PDSOI devices was studied, and the experimental results showed that the degree of SILC degradation of the floating device was greater than that of the H-type grid body contact PDSOI device. This showed that the floating body effect can exacerbate the SILC degradation of PDSOI devices. |
format | Online Article Text |
id | pubmed-10222930 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-102229302023-05-28 An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices Lu, Yong Liu, Hongxia Micromachines (Basel) Article The stress-induced leakage current (SILC) degradation of partially depleted silicon in insulator (PDSOI) devices under constant voltage stress (CVS) was studied. Firstly, the behaviors of threshold voltage degradation and SILC degradation of H-gate PDSOI devices under constant voltage stress were studied. It was found that both the threshold voltage degradation and SILC degradation of the device are power functions of the stress time, and the linear behavior between SILC degradation and threshold voltage degradation is good. Secondly, the soft breakdown characteristics of the PDSOI devices were studied under CVS. Thirdly, the effects of different gate stresses and different channel lengths on the threshold voltage degradation and SILC degradation of the device were studied. The results showed SILC degradation of the device under positive CVS and SILC degradation of the device under negative CVS. The shorter the channel length of the device was, the greater the SILC degradation of the device was. Finally, the influence of the floating effect on the SILC degradation of the PDSOI devices was studied, and the experimental results showed that the degree of SILC degradation of the floating device was greater than that of the H-type grid body contact PDSOI device. This showed that the floating body effect can exacerbate the SILC degradation of PDSOI devices. MDPI 2023-05-21 /pmc/articles/PMC10222930/ /pubmed/37241707 http://dx.doi.org/10.3390/mi14051084 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lu, Yong Liu, Hongxia An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices |
title | An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices |
title_full | An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices |
title_fullStr | An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices |
title_full_unstemmed | An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices |
title_short | An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices |
title_sort | investigation of silc degradation under constant voltage stress in pdsoi devices |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222930/ https://www.ncbi.nlm.nih.gov/pubmed/37241707 http://dx.doi.org/10.3390/mi14051084 |
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