Cargando…
An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices
The stress-induced leakage current (SILC) degradation of partially depleted silicon in insulator (PDSOI) devices under constant voltage stress (CVS) was studied. Firstly, the behaviors of threshold voltage degradation and SILC degradation of H-gate PDSOI devices under constant voltage stress were st...
| Autores principales: | , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222930/ https://www.ncbi.nlm.nih.gov/pubmed/37241707 http://dx.doi.org/10.3390/mi14051084 |