WO(3) Thin-Film Optical Gas Sensors Based on Gasochromic Effect towards Low Hydrogen Concentrations

Hydrogen gas sensors have recently attracted increased interest due to the explosive nature of H(2) and its strategic importance in the sustainable global energy system. In this paper, the tungsten oxide thin films deposited by innovative gas impulse magnetron sputtering have been investigated in terms of their response to H(2). It was found that the most favourable annealing temperature in terms of sensor response value, as well as response and recovery times, was achieved at 673 K. This annealing process caused a change in the WO(3) cross-section morphology from a featureless and homogenous form to a rather columnar one, but still maintaining the same surface homogeneity. In addition to that, the full-phase transition from an amorphous to nanocrystalline form occurred with a crystallite size of 23 nm. It was found that the sensor response to only 25 ppm of H(2) was equal to 6.3, which is one of the best results presented in the literature so far of WO(3) optical gas sensors based on a gasochromic effect. Moreover, the results of the gasochromic effect were correlated with the changes in the extinction coefficient and the concentration of the free charge carriers, which is also a novel approach to the understanding of the gasochromic phenomenon.