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Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching

In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was investigated. Based on the infrared temperature measureme...

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Detalles Bibliográficos
Autores principales:	Xu, Shaozhen, Yuan, Julong, Zhou, Jianxing, Cheng, Kun, Gan, Hezhong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223682/ https://www.ncbi.nlm.nih.gov/pubmed/37241616 http://dx.doi.org/10.3390/mi14050992

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