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Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters

This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two...

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Autores principales: von Windheim, Tasso, Gilchrist, Kristin H., Parker, Charles B., Hall, Stephen, Carlson, James B., Stokes, David, Baldasaro, Nicholas G., Hess, Charles T., Scheick, Leif, Rax, Bernard, Stoner, Brian, Glass, Jeffrey T., Amsden, Jason J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223976/
https://www.ncbi.nlm.nih.gov/pubmed/37241597
http://dx.doi.org/10.3390/mi14050973
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author von Windheim, Tasso
Gilchrist, Kristin H.
Parker, Charles B.
Hall, Stephen
Carlson, James B.
Stokes, David
Baldasaro, Nicholas G.
Hess, Charles T.
Scheick, Leif
Rax, Bernard
Stoner, Brian
Glass, Jeffrey T.
Amsden, Jason J.
author_facet von Windheim, Tasso
Gilchrist, Kristin H.
Parker, Charles B.
Hall, Stephen
Carlson, James B.
Stokes, David
Baldasaro, Nicholas G.
Hess, Charles T.
Scheick, Leif
Rax, Bernard
Stoner, Brian
Glass, Jeffrey T.
Amsden, Jason J.
author_sort von Windheim, Tasso
collection PubMed
description This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10(−9) S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments.
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spelling pubmed-102239762023-05-28 Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters von Windheim, Tasso Gilchrist, Kristin H. Parker, Charles B. Hall, Stephen Carlson, James B. Stokes, David Baldasaro, Nicholas G. Hess, Charles T. Scheick, Leif Rax, Bernard Stoner, Brian Glass, Jeffrey T. Amsden, Jason J. Micromachines (Basel) Article This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10(−9) S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments. MDPI 2023-04-29 /pmc/articles/PMC10223976/ /pubmed/37241597 http://dx.doi.org/10.3390/mi14050973 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
von Windheim, Tasso
Gilchrist, Kristin H.
Parker, Charles B.
Hall, Stephen
Carlson, James B.
Stokes, David
Baldasaro, Nicholas G.
Hess, Charles T.
Scheick, Leif
Rax, Bernard
Stoner, Brian
Glass, Jeffrey T.
Amsden, Jason J.
Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
title Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
title_full Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
title_fullStr Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
title_full_unstemmed Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
title_short Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
title_sort proof-of-concept vacuum microelectronic nor gate fabricated using microelectromechanical systems and carbon nanotube field emitters
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223976/
https://www.ncbi.nlm.nih.gov/pubmed/37241597
http://dx.doi.org/10.3390/mi14050973
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