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Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters
This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223976/ https://www.ncbi.nlm.nih.gov/pubmed/37241597 http://dx.doi.org/10.3390/mi14050973 |
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author | von Windheim, Tasso Gilchrist, Kristin H. Parker, Charles B. Hall, Stephen Carlson, James B. Stokes, David Baldasaro, Nicholas G. Hess, Charles T. Scheick, Leif Rax, Bernard Stoner, Brian Glass, Jeffrey T. Amsden, Jason J. |
author_facet | von Windheim, Tasso Gilchrist, Kristin H. Parker, Charles B. Hall, Stephen Carlson, James B. Stokes, David Baldasaro, Nicholas G. Hess, Charles T. Scheick, Leif Rax, Bernard Stoner, Brian Glass, Jeffrey T. Amsden, Jason J. |
author_sort | von Windheim, Tasso |
collection | PubMed |
description | This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10(−9) S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments. |
format | Online Article Text |
id | pubmed-10223976 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-102239762023-05-28 Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters von Windheim, Tasso Gilchrist, Kristin H. Parker, Charles B. Hall, Stephen Carlson, James B. Stokes, David Baldasaro, Nicholas G. Hess, Charles T. Scheick, Leif Rax, Bernard Stoner, Brian Glass, Jeffrey T. Amsden, Jason J. Micromachines (Basel) Article This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10(−9) S as current saturation was not achieved due to a coupling effect between the anode voltage and cathode current. With both tetrodes working in parallel, the NOR logic capabilities were demonstrated. However, the device exhibited asymmetric performance due to differences in the CNT emitter performance in each tetrode. Because vacuum microelectronic devices are attractive for use in high radiation environments, to test the radiation survivability of this device platform, we demonstrated the function of a simplified diode device structure during exposure to gamma radiation at a rate of 45.6 rad(Si)/second. These devices represent a proof-of-concept for a platform that can be used to build intricate vacuum microelectronic logic devices for use in high-radiation environments. MDPI 2023-04-29 /pmc/articles/PMC10223976/ /pubmed/37241597 http://dx.doi.org/10.3390/mi14050973 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article von Windheim, Tasso Gilchrist, Kristin H. Parker, Charles B. Hall, Stephen Carlson, James B. Stokes, David Baldasaro, Nicholas G. Hess, Charles T. Scheick, Leif Rax, Bernard Stoner, Brian Glass, Jeffrey T. Amsden, Jason J. Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
title | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
title_full | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
title_fullStr | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
title_full_unstemmed | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
title_short | Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters |
title_sort | proof-of-concept vacuum microelectronic nor gate fabricated using microelectromechanical systems and carbon nanotube field emitters |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223976/ https://www.ncbi.nlm.nih.gov/pubmed/37241597 http://dx.doi.org/10.3390/mi14050973 |
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