4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Yanjuan, Jia, Dezhen, Fang, Junpeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224167/
https://www.ncbi.nlm.nih.gov/pubmed/37241575
http://dx.doi.org/10.3390/mi14050950
Descripción
Sumario:In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.

Ejemplares similares