4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational...

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Detalles Bibliográficos
Autores principales: Liu, Yanjuan, Jia, Dezhen, Fang, Junpeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224167/
https://www.ncbi.nlm.nih.gov/pubmed/37241575
http://dx.doi.org/10.3390/mi14050950
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author Liu, Yanjuan
Jia, Dezhen
Fang, Junpeng
author_facet Liu, Yanjuan
Jia, Dezhen
Fang, Junpeng
author_sort Liu, Yanjuan
collection PubMed
description In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.
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spelling pubmed-102241672023-05-28 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance Liu, Yanjuan Jia, Dezhen Fang, Junpeng Micromachines (Basel) Article In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process. MDPI 2023-04-27 /pmc/articles/PMC10224167/ /pubmed/37241575 http://dx.doi.org/10.3390/mi14050950 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Liu, Yanjuan
Jia, Dezhen
Fang, Junpeng
4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
title 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
title_full 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
title_fullStr 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
title_full_unstemmed 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
title_short 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
title_sort 4h-sic ldmos integrating a trench mos channel diode for improved reverse recovery performance
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224167/
https://www.ncbi.nlm.nih.gov/pubmed/37241575
http://dx.doi.org/10.3390/mi14050950
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AT jiadezhen 4hsicldmosintegratingatrenchmoschanneldiodeforimprovedreverserecoveryperformance
AT fangjunpeng 4hsicldmosintegratingatrenchmoschanneldiodeforimprovedreverserecoveryperformance

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