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4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational...

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Detalles Bibliográficos
Autores principales:	Liu, Yanjuan, Jia, Dezhen, Fang, Junpeng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224167/ https://www.ncbi.nlm.nih.gov/pubmed/37241575 http://dx.doi.org/10.3390/mi14050950

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