Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors

In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN gate HEMTs were investigated by performing the gate step voltage stress and the gate constant voltage stress measurements. In the gate step voltage stress test, the positive and negative shifts of threshold voltage (V(TH)) depended on the range of the gate stress voltage (V(G.stress)) at room temperature. However, the positive shift of V(TH) in the small gate stress voltage was not observed at 75 and 100 °C and the negative shift of V(TH) was started from a lower gate voltage at a high temperature compared to room temperature. In the gate constant voltage stress test, the gate leakage current increased with three steps in the off-state current characteristics as the degradation progressed. To investigate the detailed breakdown mechanism, we measured the two terminal currents (I(GD) and I(GS)) before and after the stress test. The difference between the gate–source current and the gate–drain current in the reverse gate bias indicated that the increase of the leakage current was attributed to the degradation between the gate and the source while the drain side was not affected.