Optically modified second harmonic generation in silicon oxynitride thin films via local layer heating

Strong second harmonic generation (SHG) in silicon nitride has been extensively studied—among others, in terms of laser-induced SHG enhancement in Si(3)N(4) waveguides. This enhancement has been ascribed to the all-optical poling induced by the coherent photogalvanic effect. Yet, an analogous process for Si(3)N(4) thin films has not been reported. Our article reports on the observation of laser-induced threefold SHG enhancement in Si(3)N(4) thin films. The observed enhancement has many features similar to all-optical poling, such as highly nonlinear power dependence, cumulative effect, or connection to the Si(3)N(4)–Si interface. However, identical experiments for low-oxygen silicon oxynitride thin films lead to complex behavior, including laser-induced SHG reduction. Following a thorough experimental study, including the effects of repetition rate or pulse length, the observed results were ascribed to heat-induced SHG variation. In addition to revealing a new mechanism of laser-induced SHG variation, our results also provide a means to identify this mechanism.