Demonstration of MOCVD-grown Ga(2)O(3) power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

In this work, we demonstrated Ga(2)O(3)-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga(2)O(3):Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga(2)O(3) power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga(2)O(3) power MOSFETs.