Demonstration of MOCVD-grown Ga(2)O(3) power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

In this work, we demonstrated Ga(2)O(3)-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga(2)O(3):Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga(2...

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Detalles Bibliográficos
Autores principales: Ngo, Sao Thien, Lu, Chan-Hung, Tarntair, Fu-Gow, Chung, Sheng-Ti, Wu, Tian-Li, Horng, Ray-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10229498/
https://www.ncbi.nlm.nih.gov/pubmed/37382742
http://dx.doi.org/10.1186/s11671-023-03858-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10229498/
https://www.ncbi.nlm.nih.gov/pubmed/37382742
http://dx.doi.org/10.1186/s11671-023-03858-w

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