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Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations

[Image: see text] We propose a universal approach to model intervalence charge transfer (IVCT) and metal-to-metal charge transfer (MMCT) transitions between ions in solids. The approach relies on already well-known and reliable ab initio RASSCF/CASPT2/RASSI-SO calculations for a series of emission c...

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Autores principales: Shyichuk, Andrii, Krośnicki, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10240500/
https://www.ncbi.nlm.nih.gov/pubmed/37196340
http://dx.doi.org/10.1021/acs.jpca.2c07979
_version_ 1785053772555223040
author Shyichuk, Andrii
Krośnicki, Marek
author_facet Shyichuk, Andrii
Krośnicki, Marek
author_sort Shyichuk, Andrii
collection PubMed
description [Image: see text] We propose a universal approach to model intervalence charge transfer (IVCT) and metal-to-metal charge transfer (MMCT) transitions between ions in solids. The approach relies on already well-known and reliable ab initio RASSCF/CASPT2/RASSI-SO calculations for a series of emission center coordination geometries (restricted active space self-consistent field, complete active space second-order perturbation theory, and restricted active space state interaction with spin-orbit coupling). Embedding with ab initio model potentials (AIMPs) is used to represent the crystal lattice. We propose a way to construct the geometries via interpolation of the coordinates obtained using solid-state density functional theory (DFT) calculations for the structures where the activator metal is at specific oxidation (charge) states of interest. The approach thus takes the best of two worlds: the precision of the embedded cluster calculations (including localized excited states) and the geometries from DFT, where the effects of ionic radii mismatch (and eventual nearby defects) can be modeled explicitly. The method is applied to the Pr activator and Ti, Zr, Hf codopants in cubic Lu(2)O(3), in which the said ions are used to obtain energy storage and thermoluminescence properties. Electron trap charging and discharging mechanisms (not involving a conduction band) are discussed in the context of the IVCT and MMCT role in them. Trap depths and trap quenching pathways are analyzed.
format Online
Article
Text
id pubmed-10240500
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-102405002023-06-06 Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations Shyichuk, Andrii Krośnicki, Marek J Phys Chem A [Image: see text] We propose a universal approach to model intervalence charge transfer (IVCT) and metal-to-metal charge transfer (MMCT) transitions between ions in solids. The approach relies on already well-known and reliable ab initio RASSCF/CASPT2/RASSI-SO calculations for a series of emission center coordination geometries (restricted active space self-consistent field, complete active space second-order perturbation theory, and restricted active space state interaction with spin-orbit coupling). Embedding with ab initio model potentials (AIMPs) is used to represent the crystal lattice. We propose a way to construct the geometries via interpolation of the coordinates obtained using solid-state density functional theory (DFT) calculations for the structures where the activator metal is at specific oxidation (charge) states of interest. The approach thus takes the best of two worlds: the precision of the embedded cluster calculations (including localized excited states) and the geometries from DFT, where the effects of ionic radii mismatch (and eventual nearby defects) can be modeled explicitly. The method is applied to the Pr activator and Ti, Zr, Hf codopants in cubic Lu(2)O(3), in which the said ions are used to obtain energy storage and thermoluminescence properties. Electron trap charging and discharging mechanisms (not involving a conduction band) are discussed in the context of the IVCT and MMCT role in them. Trap depths and trap quenching pathways are analyzed. American Chemical Society 2023-05-17 /pmc/articles/PMC10240500/ /pubmed/37196340 http://dx.doi.org/10.1021/acs.jpca.2c07979 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Shyichuk, Andrii
Krośnicki, Marek
Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations
title Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations
title_full Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations
title_fullStr Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations
title_full_unstemmed Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations
title_short Electron Trap Depths in Cubic Lutetium Oxide Doped with Pr and Ti, Zr or Hf—From Ab Initio Multiconfigurational Calculations
title_sort electron trap depths in cubic lutetium oxide doped with pr and ti, zr or hf—from ab initio multiconfigurational calculations
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10240500/
https://www.ncbi.nlm.nih.gov/pubmed/37196340
http://dx.doi.org/10.1021/acs.jpca.2c07979
work_keys_str_mv AT shyichukandrii electrontrapdepthsincubiclutetiumoxidedopedwithprandtizrorhffromabinitiomulticonfigurationalcalculations
AT krosnickimarek electrontrapdepthsincubiclutetiumoxidedopedwithprandtizrorhffromabinitiomulticonfigurationalcalculations