Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

We present a study with a numerical model based on [Formula: see text] , including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots,...

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Detalles Bibliográficos
Autores principales: Barettin, Daniele, Shtrom, Igor V., Reznik, Rodion R., Cirlin, George E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254198/
https://www.ncbi.nlm.nih.gov/pubmed/37299640
http://dx.doi.org/10.3390/nano13111737
Descripción
Sumario:We present a study with a numerical model based on [Formula: see text] , including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.

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