Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire

We present a study with a numerical model based on [Formula: see text] , including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots,...

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Autores principales: Barettin, Daniele, Shtrom, Igor V., Reznik, Rodion R., Cirlin, George E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254198/
https://www.ncbi.nlm.nih.gov/pubmed/37299640
http://dx.doi.org/10.3390/nano13111737
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author Barettin, Daniele
Shtrom, Igor V.
Reznik, Rodion R.
Cirlin, George E.
author_facet Barettin, Daniele
Shtrom, Igor V.
Reznik, Rodion R.
Cirlin, George E.
author_sort Barettin, Daniele
collection PubMed
description We present a study with a numerical model based on [Formula: see text] , including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model.
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spelling pubmed-102541982023-06-10 Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire Barettin, Daniele Shtrom, Igor V. Reznik, Rodion R. Cirlin, George E. Nanomaterials (Basel) Article We present a study with a numerical model based on [Formula: see text] , including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots, in particular the thickness, are obtained from experimental data measured by our group. We also present a comparison between the experimental and numerically calculated spectra to support the validity of our model. MDPI 2023-05-25 /pmc/articles/PMC10254198/ /pubmed/37299640 http://dx.doi.org/10.3390/nano13111737 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Barettin, Daniele
Shtrom, Igor V.
Reznik, Rodion R.
Cirlin, George E.
Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
title Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
title_full Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
title_fullStr Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
title_full_unstemmed Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
title_short Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
title_sort model of a gaas quantum dot in a direct band gap algaas wurtzite nanowire
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254198/
https://www.ncbi.nlm.nih.gov/pubmed/37299640
http://dx.doi.org/10.3390/nano13111737
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