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Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
We present a study with a numerical model based on [Formula: see text] , including electromechanical fields, to evaluate the electromechanical and optoelectronic properties of single GaAs quantum dots embedded in direct band gap AlGaAs nanowires. The geometry and the dimensions of the quantum dots,...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254198/ https://www.ncbi.nlm.nih.gov/pubmed/37299640 http://dx.doi.org/10.3390/nano13111737 |