Cargando…
Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study
The dimensions of nanoribbons have a significant impact on their material properties. In the fields of optoelectronics and spintronics, one-dimensional nanoribbons exhibit distinct advantages due to their low-dimensional and quantum restrictions. Novel structures can be formed by combining silicon a...
Autores principales: | , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254421/ https://www.ncbi.nlm.nih.gov/pubmed/37297175 http://dx.doi.org/10.3390/ma16114041 |
_version_ | 1785056639056871424 |
---|---|
author | Liu, Zhichao Liu, Xiaobiao Wang, Junru |
author_facet | Liu, Zhichao Liu, Xiaobiao Wang, Junru |
author_sort | Liu, Zhichao |
collection | PubMed |
description | The dimensions of nanoribbons have a significant impact on their material properties. In the fields of optoelectronics and spintronics, one-dimensional nanoribbons exhibit distinct advantages due to their low-dimensional and quantum restrictions. Novel structures can be formed by combining silicon and carbon at different stoichiometric ratios. Using density functional theory, we thoroughly explored the electronic structure properties of two kinds of silicon–carbon nanoribbons (penta-SiC(2) and g-SiC(3) nanoribbons) with different widths and edge conditions. Our study reveals that the electronic properties of penta-SiC(2) and g-SiC(3) nanoribbons are closely related to their width and orientation. Specifically, one type of penta-SiC(2) nanoribbons exhibits antiferromagnetic semiconductor characteristics, two types of penta-SiC(2) nanoribbons have moderate band gaps, and the band gap of armchair g-SiC(3) nanoribbons oscillates in three dimensions with the width of the nanoribbon. Notably, zigzag g-SiC(3) nanoribbons exhibit excellent conductivity, high theoretical capacity (1421 mA h g(−1)), moderate open circuit voltage (0.27 V), and low diffusion barriers (0.09 eV), making them a promising candidate for high storage capacity electrode material in lithium-ion batteries. Our analysis provides a theoretical basis for exploring the potential of these nanoribbons in electronic and optoelectronic devices as well as high-performance batteries. |
format | Online Article Text |
id | pubmed-10254421 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-102544212023-06-10 Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study Liu, Zhichao Liu, Xiaobiao Wang, Junru Materials (Basel) Article The dimensions of nanoribbons have a significant impact on their material properties. In the fields of optoelectronics and spintronics, one-dimensional nanoribbons exhibit distinct advantages due to their low-dimensional and quantum restrictions. Novel structures can be formed by combining silicon and carbon at different stoichiometric ratios. Using density functional theory, we thoroughly explored the electronic structure properties of two kinds of silicon–carbon nanoribbons (penta-SiC(2) and g-SiC(3) nanoribbons) with different widths and edge conditions. Our study reveals that the electronic properties of penta-SiC(2) and g-SiC(3) nanoribbons are closely related to their width and orientation. Specifically, one type of penta-SiC(2) nanoribbons exhibits antiferromagnetic semiconductor characteristics, two types of penta-SiC(2) nanoribbons have moderate band gaps, and the band gap of armchair g-SiC(3) nanoribbons oscillates in three dimensions with the width of the nanoribbon. Notably, zigzag g-SiC(3) nanoribbons exhibit excellent conductivity, high theoretical capacity (1421 mA h g(−1)), moderate open circuit voltage (0.27 V), and low diffusion barriers (0.09 eV), making them a promising candidate for high storage capacity electrode material in lithium-ion batteries. Our analysis provides a theoretical basis for exploring the potential of these nanoribbons in electronic and optoelectronic devices as well as high-performance batteries. MDPI 2023-05-29 /pmc/articles/PMC10254421/ /pubmed/37297175 http://dx.doi.org/10.3390/ma16114041 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Liu, Zhichao Liu, Xiaobiao Wang, Junru Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study |
title | Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study |
title_full | Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study |
title_fullStr | Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study |
title_full_unstemmed | Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study |
title_short | Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study |
title_sort | electronic structures of penta-sic(2) and g-sic(3) nanoribbons: a first-principles study |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254421/ https://www.ncbi.nlm.nih.gov/pubmed/37297175 http://dx.doi.org/10.3390/ma16114041 |
work_keys_str_mv | AT liuzhichao electronicstructuresofpentasic2andgsic3nanoribbonsafirstprinciplesstudy AT liuxiaobiao electronicstructuresofpentasic2andgsic3nanoribbonsafirstprinciplesstudy AT wangjunru electronicstructuresofpentasic2andgsic3nanoribbonsafirstprinciplesstudy |