Interface Optimization and Performance Enhancement of Er(2)O(3)-Based MOS Devices by ALD-Derived Al(2)O(3) Passivation Layers and Annealing Treatment

In this paper, the effect of atomic layer deposition (ALD)-derived Al(2)O(3) passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er(2)O(3) high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectr...

Descripción completa

Detalles Bibliográficos
Autores principales: Wu, Qiuju, Yu, Qing, He, Gang, Wang, Wenhao, Lu, Jinyu, Yao, Bo, Liu, Shiyan, Fang, Zebo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254668/
https://www.ncbi.nlm.nih.gov/pubmed/37299643
http://dx.doi.org/10.3390/nano13111740

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254668/
https://www.ncbi.nlm.nih.gov/pubmed/37299643
http://dx.doi.org/10.3390/nano13111740

Ejemplares similares