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Interface Optimization and Performance Enhancement of Er(2)O(3)-Based MOS Devices by ALD-Derived Al(2)O(3) Passivation Layers and Annealing Treatment

In this paper, the effect of atomic layer deposition (ALD)-derived Al(2)O(3) passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er(2)O(3) high-k gate dielectrics on Si substrate has been investigated. X-ray photoelectron spectr...

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Detalles Bibliográficos
Autores principales:	Wu, Qiuju, Yu, Qing, He, Gang, Wang, Wenhao, Lu, Jinyu, Yao, Bo, Liu, Shiyan, Fang, Zebo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254668/ https://www.ncbi.nlm.nih.gov/pubmed/37299643 http://dx.doi.org/10.3390/nano13111740

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