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Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing
Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achi...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10264419/ https://www.ncbi.nlm.nih.gov/pubmed/37311855 http://dx.doi.org/10.1038/s41598-023-36784-z |
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author | Sahu, Dwipak Prasad Park, Kitae Chung, Peter Hayoung Han, Jimin Yoon, Tae-Sik |
author_facet | Sahu, Dwipak Prasad Park, Kitae Chung, Peter Hayoung Han, Jimin Yoon, Tae-Sik |
author_sort | Sahu, Dwipak Prasad |
collection | PubMed |
description | Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO(2)/HfO(2−x)(oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust nature of filament. A narrow cycle-to-cycle and device-to-device distribution were also demonstrated by the filament confinement in a limited region. The different concentrations of oxygen vacancies at each layer played a significant role in switching phenomena, as confirmed through X-ray photoelectron spectroscopy analysis. The analog weight update characteristics were found to strongly depend on the various conditions of voltage pulse parameters including its amplitude, width, and interval time. In particular, linear and symmetric weight updates for accurate learning and pattern recognition could be achieved by adopting incremental step pulse programming (ISPP) operation scheme which rendered a high-resolution dynamic range with linear and symmetry weight updates as a consequence of precisely controlled filament geometry. A two-layer perceptron neural network simulation with HfO(2)/HfO(2−x) synapses provided an 80% recognition accuracy for handwritten digits. The development of oxide/suboxide hafnium oxide memristive devices has the capacity to drive forward the development of efficient neuromorphic computing systems. |
format | Online Article Text |
id | pubmed-10264419 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-102644192023-06-15 Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing Sahu, Dwipak Prasad Park, Kitae Chung, Peter Hayoung Han, Jimin Yoon, Tae-Sik Sci Rep Article Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO(2)/HfO(2−x)(oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust nature of filament. A narrow cycle-to-cycle and device-to-device distribution were also demonstrated by the filament confinement in a limited region. The different concentrations of oxygen vacancies at each layer played a significant role in switching phenomena, as confirmed through X-ray photoelectron spectroscopy analysis. The analog weight update characteristics were found to strongly depend on the various conditions of voltage pulse parameters including its amplitude, width, and interval time. In particular, linear and symmetric weight updates for accurate learning and pattern recognition could be achieved by adopting incremental step pulse programming (ISPP) operation scheme which rendered a high-resolution dynamic range with linear and symmetry weight updates as a consequence of precisely controlled filament geometry. A two-layer perceptron neural network simulation with HfO(2)/HfO(2−x) synapses provided an 80% recognition accuracy for handwritten digits. The development of oxide/suboxide hafnium oxide memristive devices has the capacity to drive forward the development of efficient neuromorphic computing systems. Nature Publishing Group UK 2023-06-13 /pmc/articles/PMC10264419/ /pubmed/37311855 http://dx.doi.org/10.1038/s41598-023-36784-z Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Sahu, Dwipak Prasad Park, Kitae Chung, Peter Hayoung Han, Jimin Yoon, Tae-Sik Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing |
title | Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing |
title_full | Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing |
title_fullStr | Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing |
title_full_unstemmed | Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing |
title_short | Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing |
title_sort | linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide hfo(x) bilayer memristive device for neuromorphic computing |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10264419/ https://www.ncbi.nlm.nih.gov/pubmed/37311855 http://dx.doi.org/10.1038/s41598-023-36784-z |
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