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Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films
Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. H...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10264439/ https://www.ncbi.nlm.nih.gov/pubmed/37311774 http://dx.doi.org/10.1038/s41467-023-39112-1 |
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author | Fujiwara, Kohei Kato, Yasuyuki Abe, Hitoshi Noguchi, Shun Shiogai, Junichi Niwa, Yasuhiro Kumigashira, Hiroshi Motome, Yukitoshi Tsukazaki, Atsushi |
author_facet | Fujiwara, Kohei Kato, Yasuyuki Abe, Hitoshi Noguchi, Shun Shiogai, Junichi Niwa, Yasuhiro Kumigashira, Hiroshi Motome, Yukitoshi Tsukazaki, Atsushi |
author_sort | Fujiwara, Kohei |
collection | PubMed |
description | Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe–Sn amorphous films. The Fe–Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe(3)Sn(2) and Fe(3)Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices. |
format | Online Article Text |
id | pubmed-10264439 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-102644392023-06-15 Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films Fujiwara, Kohei Kato, Yasuyuki Abe, Hitoshi Noguchi, Shun Shiogai, Junichi Niwa, Yasuhiro Kumigashira, Hiroshi Motome, Yukitoshi Tsukazaki, Atsushi Nat Commun Article Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe–Sn amorphous films. The Fe–Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe(3)Sn(2) and Fe(3)Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices. Nature Publishing Group UK 2023-06-13 /pmc/articles/PMC10264439/ /pubmed/37311774 http://dx.doi.org/10.1038/s41467-023-39112-1 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Fujiwara, Kohei Kato, Yasuyuki Abe, Hitoshi Noguchi, Shun Shiogai, Junichi Niwa, Yasuhiro Kumigashira, Hiroshi Motome, Yukitoshi Tsukazaki, Atsushi Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films |
title | Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films |
title_full | Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films |
title_fullStr | Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films |
title_full_unstemmed | Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films |
title_short | Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films |
title_sort | berry curvature contributions of kagome-lattice fragments in amorphous fe–sn thin films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10264439/ https://www.ncbi.nlm.nih.gov/pubmed/37311774 http://dx.doi.org/10.1038/s41467-023-39112-1 |
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