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A Centimeter‐Scale Type‐II Weyl Semimetal for Flexible and Fast Ultra‐Broadband Photodetection from Ultraviolet to Sub‐Millimeter Wave Regime

Flexible photodetectors with ultra‐broadband sensitivities, fast response, and high responsivity are crucial for wearable applications. Recently, van der Waals (vdW) Weyl semimetals have gained much attention due to their unique electronic band structure, making them an ideal material platform for d...

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Detalles Bibliográficos
Autores principales: Yang, Qi, Wang, Ximiao, He, Zhihao, Chen, Yijun, Li, Shuwei, Chen, Huanjun, Wu, Shuxiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265072/
https://www.ncbi.nlm.nih.gov/pubmed/37092581
http://dx.doi.org/10.1002/advs.202205609
Descripción
Sumario:Flexible photodetectors with ultra‐broadband sensitivities, fast response, and high responsivity are crucial for wearable applications. Recently, van der Waals (vdW) Weyl semimetals have gained much attention due to their unique electronic band structure, making them an ideal material platform for developing broadband photodetectors from ultraviolet (UV) to the terahertz (THz) regime. However, large‐area synthesis of vdW semimetals on a flexible substrate is still a challenge, limiting their application in flexible devices. In this study, centimeter‐scale type‐II vdW Weyl semimetal, T(d)‐MoTe(2) films, are grown on a flexible mica substrate by molecular beam epitaxy. A self‐powered and flexible photodetector without an antenna demonstrated an outstanding ability to detect electromagnetic radiation from UV to sub‐millimeter (SMM) wave at room temperature, with a fast response time of ≈20 µs, a responsivity of 0.53 mA W(−1) (at 2.52 THz), and a noise‐equivalent power (NEP) of 2.65 nW Hz(−0.5) (at 2.52 THz). The flexible photodetectors are also used to image shielded items with high resolution at 2.52 THz. These results can pave the way for developing flexible and wearable optoelectronic devices using direct‐grown large‐area vdW semimetals.