High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)

Nanobeam Lasers In article number 2207611, Youngmin Kim, Donguk Nam, and co‐workers report a scalable technique to produce identical on‐chip lasers. The emission wavelengths of multiple GeSn nanolasers are precisely aligned by utilizing dynamically tunable strain engineering. This groundbreaking app...

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Detalles Bibliográficos
Autores principales: Kim, Youngmin, Joo, Hyo‐Jun, Chen, Melvina, Son, Bongkwon, Burt, Daniel, Shi, Xuncheng, Zhang, Lin, Ikonic, Zoran, Tan, Chuan Seng, Nam, Donguk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Inside Back Cover
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265075/
http://dx.doi.org/10.1002/advs.202370109
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author Kim, Youngmin
Joo, Hyo‐Jun
Chen, Melvina
Son, Bongkwon
Burt, Daniel
Shi, Xuncheng
Zhang, Lin
Ikonic, Zoran
Tan, Chuan Seng
Nam, Donguk
author_facet Kim, Youngmin
Joo, Hyo‐Jun
Chen, Melvina
Son, Bongkwon
Burt, Daniel
Shi, Xuncheng
Zhang, Lin
Ikonic, Zoran
Tan, Chuan Seng
Nam, Donguk
author_sort Kim, Youngmin
collection PubMed
description Nanobeam Lasers In article number 2207611, Youngmin Kim, Donguk Nam, and co‐workers report a scalable technique to produce identical on‐chip lasers. The emission wavelengths of multiple GeSn nanolasers are precisely aligned by utilizing dynamically tunable strain engineering. This groundbreaking approach opens new avenues for realizing large‐scale photonic‐integrated circuits equipped with an array of indistinguishable light sources. [Image: see text]
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spelling pubmed-102650752023-06-15 High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023) Kim, Youngmin Joo, Hyo‐Jun Chen, Melvina Son, Bongkwon Burt, Daniel Shi, Xuncheng Zhang, Lin Ikonic, Zoran Tan, Chuan Seng Nam, Donguk Adv Sci (Weinh) Inside Back Cover Nanobeam Lasers In article number 2207611, Youngmin Kim, Donguk Nam, and co‐workers report a scalable technique to produce identical on‐chip lasers. The emission wavelengths of multiple GeSn nanolasers are precisely aligned by utilizing dynamically tunable strain engineering. This groundbreaking approach opens new avenues for realizing large‐scale photonic‐integrated circuits equipped with an array of indistinguishable light sources. [Image: see text] John Wiley and Sons Inc. 2023-06-14 /pmc/articles/PMC10265075/ http://dx.doi.org/10.1002/advs.202370109 Text en © 2023 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Inside Back Cover
Kim, Youngmin
Joo, Hyo‐Jun
Chen, Melvina
Son, Bongkwon
Burt, Daniel
Shi, Xuncheng
Zhang, Lin
Ikonic, Zoran
Tan, Chuan Seng
Nam, Donguk
High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
title High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
title_full High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
title_fullStr High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
title_full_unstemmed High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
title_short High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)
title_sort high‐precision wavelength tuning of gesn nanobeam lasers via dynamically controlled strain engineering (adv. sci. 17/2023)
topic Inside Back Cover
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265075/
http://dx.doi.org/10.1002/advs.202370109
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