Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication

Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high‐frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub‐100 nm air channels. Despite these advantages, NACTs are still limited by low cur...

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Detalles Bibliográficos
Autores principales: Wei, Yazhou, Chen, Feiliang, Huang, Ruihan, Zhao, Jianpeng, Zhao, Haiquan, Wang, Jiachao, Li, Mo, Zhang, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265105/
https://www.ncbi.nlm.nih.gov/pubmed/37078799
http://dx.doi.org/10.1002/advs.202206385

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265105/
https://www.ncbi.nlm.nih.gov/pubmed/37078799
http://dx.doi.org/10.1002/advs.202206385

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