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Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication
Nanoscale air channel transistors (NACTs) have received significant attention due to their remarkable high‐frequency performance and high switching speed, which is enabled by the ballistic transport of electrons in sub‐100 nm air channels. Despite these advantages, NACTs are still limited by low cur...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265105/ https://www.ncbi.nlm.nih.gov/pubmed/37078799 http://dx.doi.org/10.1002/advs.202206385 |