Growth of κ-([Al,In](x)Ga(1-x))(2)O(3) Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors

[Image: see text] The wide band gap semiconductor κ-Ga(2)O(3) and its aluminum and indium alloys have been proposed as promising materials for many applications. One of them is the use of inter-sub-band transitions in quantum-well (QW) systems for infrared detectors. Our simulations show that the de...

Descripción completa

Detalles Bibliográficos
Autores principales: Schultz, Thorsten, Kneiß, Max, Storm, Philipp, Splith, Daniel, von Wenckstern, Holger, Koch, Christoph T., Hammud, Adnan, Grundmann, Marius, Koch, Norbert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288438/
https://www.ncbi.nlm.nih.gov/pubmed/37278556
http://dx.doi.org/10.1021/acsami.3c02695

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288438/
https://www.ncbi.nlm.nih.gov/pubmed/37278556
http://dx.doi.org/10.1021/acsami.3c02695

Ejemplares similares