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Growth of κ-([Al,In](x)Ga(1-x))(2)O(3) Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors
[Image: see text] The wide band gap semiconductor κ-Ga(2)O(3) and its aluminum and indium alloys have been proposed as promising materials for many applications. One of them is the use of inter-sub-band transitions in quantum-well (QW) systems for infrared detectors. Our simulations show that the de...
Autores principales: | Schultz, Thorsten, Kneiß, Max, Storm, Philipp, Splith, Daniel, von Wenckstern, Holger, Koch, Christoph T., Hammud, Adnan, Grundmann, Marius, Koch, Norbert |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288438/ https://www.ncbi.nlm.nih.gov/pubmed/37278556 http://dx.doi.org/10.1021/acsami.3c02695 |
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