A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors

A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct N...

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Detalles Bibliográficos
Autores principales: Lee, Chungryeol, Lee, Changhyeon, Lee, Seungmin, Choi, Junhwan, Yoo, Hocheon, Im, Sung Gap
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10290076/
https://www.ncbi.nlm.nih.gov/pubmed/37353504
http://dx.doi.org/10.1038/s41467-023-39394-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10290076/
https://www.ncbi.nlm.nih.gov/pubmed/37353504
http://dx.doi.org/10.1038/s41467-023-39394-5

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