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A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors
A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct N...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10290076/ https://www.ncbi.nlm.nih.gov/pubmed/37353504 http://dx.doi.org/10.1038/s41467-023-39394-5 |