Cargando…
Superior artificial synaptic properties applicable to neuromorphic computing system in HfO(x)-based resistive memory with high recognition rates
With the development of artificial intelligence and the importance of big data processing, research is actively underway to break away from data bottlenecks and modern Von Neumann architecture computing structures that consume considerable energy. Among these, hardware technology for neuromorphic co...
Autores principales: | Seo, Hyun Kyu, Lee, Su Yeon, Yang, Min Kyu |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10290622/ http://dx.doi.org/10.1186/s11671-023-03862-0 |
Ejemplares similares
-
Pseudo-Interface Switching of a Two-Terminal TaO(x)/HfO(2) Synaptic Device for Neuromorphic Applications
por: Ryu, Hojeong, et al.
Publicado: (2020) -
The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO(x)/W Bilayer-Structured Memory Device
por: Noh, Minseo, et al.
Publicado: (2023) -
Improved resistive switching characteristics of a multi-stacked HfO(2)/Al(2)O(3)/HfO(2) RRAM structure for neuromorphic and synaptic applications: experimental and computational study
por: Khera, Ejaz Ahmad, et al.
Publicado: (2022) -
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO(x) bilayer memristive device for neuromorphic computing
por: Sahu, Dwipak Prasad, et al.
Publicado: (2023) -
Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
por: Tan, Tingting, et al.
Publicado: (2018)