Exploring room temperature spin transport under band gap opening in bilayer graphene

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters...

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Detalles Bibliográficos
Autores principales: Anderson, Christopher R., Natera-Cordero, Noel, Guarochico-Moreira, Victor H., Grigorieva, Irina V., Vera-Marun, Ivan J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10293296/
https://www.ncbi.nlm.nih.gov/pubmed/37365221
http://dx.doi.org/10.1038/s41598-023-36800-2
Descripción
Sumario:We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.

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