High-Efficiency CsPbBr(3) Light-Emitting Diodes using One-Step Spin-Coating In Situ Dynamic Thermal Crystallization

All-inorganic perovskite materials (such as CsPbBr(3)) have received widespread attention because of their better stability than hybrid counterparts, but their poor film morphology and crystalline quality limit their application in perovskite light-emitting devices (PeLEDs). Some previous studies have attempted to improve the morphology and crystalline quality of perovskite films by heating the substrate, but there are still some problems such as inaccurate temperature control, excessive temperature is not conducive to flexible applications, and the mechanism of action is not clear. In this work, we used a one-step spin-coating, low-temperature in situ thermally assisted crystallization process, in which the temperature was accurately monitored using a thermocouple in the range of 23–80 °C, and explored the effect of the in situ thermally assisted crystallization temperature on the crystallization of the all-inorganic perovskite material CsPbBr(3) and the performance of PeLEDs. In addition, we focused on the influence mechanism for the in situ thermally assisted crystallization process on the surface morphology and phase composition of the perovskite films and promote its possible application in inkjet printing and scratch coating methods.