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Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications

In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of no...

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Autores principales: Hu, Hongyang, Feng, Chuancai, Zhou, Haiyang, Dong, Danian, Pan, Xiaoshan, Wang, Xiwei, Zhang, Lu, Cheng, Shuaiqi, Pang, Wan, Liu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301468/
https://www.ncbi.nlm.nih.gov/pubmed/37374760
http://dx.doi.org/10.3390/mi14061175
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author Hu, Hongyang
Feng, Chuancai
Zhou, Haiyang
Dong, Danian
Pan, Xiaoshan
Wang, Xiwei
Zhang, Lu
Cheng, Shuaiqi
Pang, Wan
Liu, Jing
author_facet Hu, Hongyang
Feng, Chuancai
Zhou, Haiyang
Dong, Danian
Pan, Xiaoshan
Wang, Xiwei
Zhang, Lu
Cheng, Shuaiqi
Pang, Wan
Liu, Jing
author_sort Hu, Hongyang
collection PubMed
description In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of non-volatile devices. In this paper, we propose a fully digital non-volatile CIM (DNV-CIM) macro with compressed coding look-up table (LUT) multiplier (CCLUTM) using the 40 nm technology, which is highly compatible with the standard commodity NOR Flash memory. We also provide a continuous accumulation scheme for machine learning applications. When applied to a modified ResNet18 network trained under the CIFAR-10 dataset, the simulations indicate that the proposed CCLUTM-based DNV-CIM can achieve a peak energy efficiency of 75.18 TOPS/W with 4-bit multiplication and accumulation (MAC) operations.
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spelling pubmed-103014682023-06-29 Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications Hu, Hongyang Feng, Chuancai Zhou, Haiyang Dong, Danian Pan, Xiaoshan Wang, Xiwei Zhang, Lu Cheng, Shuaiqi Pang, Wan Liu, Jing Micromachines (Basel) Article In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of non-volatile devices. In this paper, we propose a fully digital non-volatile CIM (DNV-CIM) macro with compressed coding look-up table (LUT) multiplier (CCLUTM) using the 40 nm technology, which is highly compatible with the standard commodity NOR Flash memory. We also provide a continuous accumulation scheme for machine learning applications. When applied to a modified ResNet18 network trained under the CIFAR-10 dataset, the simulations indicate that the proposed CCLUTM-based DNV-CIM can achieve a peak energy efficiency of 75.18 TOPS/W with 4-bit multiplication and accumulation (MAC) operations. MDPI 2023-05-31 /pmc/articles/PMC10301468/ /pubmed/37374760 http://dx.doi.org/10.3390/mi14061175 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Hu, Hongyang
Feng, Chuancai
Zhou, Haiyang
Dong, Danian
Pan, Xiaoshan
Wang, Xiwei
Zhang, Lu
Cheng, Shuaiqi
Pang, Wan
Liu, Jing
Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
title Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
title_full Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
title_fullStr Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
title_full_unstemmed Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
title_short Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
title_sort simulation of a fully digital computing-in-memory for non-volatile memory for artificial intelligence edge applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301468/
https://www.ncbi.nlm.nih.gov/pubmed/37374760
http://dx.doi.org/10.3390/mi14061175
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