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Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications
In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of no...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301468/ https://www.ncbi.nlm.nih.gov/pubmed/37374760 http://dx.doi.org/10.3390/mi14061175 |
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author | Hu, Hongyang Feng, Chuancai Zhou, Haiyang Dong, Danian Pan, Xiaoshan Wang, Xiwei Zhang, Lu Cheng, Shuaiqi Pang, Wan Liu, Jing |
author_facet | Hu, Hongyang Feng, Chuancai Zhou, Haiyang Dong, Danian Pan, Xiaoshan Wang, Xiwei Zhang, Lu Cheng, Shuaiqi Pang, Wan Liu, Jing |
author_sort | Hu, Hongyang |
collection | PubMed |
description | In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of non-volatile devices. In this paper, we propose a fully digital non-volatile CIM (DNV-CIM) macro with compressed coding look-up table (LUT) multiplier (CCLUTM) using the 40 nm technology, which is highly compatible with the standard commodity NOR Flash memory. We also provide a continuous accumulation scheme for machine learning applications. When applied to a modified ResNet18 network trained under the CIFAR-10 dataset, the simulations indicate that the proposed CCLUTM-based DNV-CIM can achieve a peak energy efficiency of 75.18 TOPS/W with 4-bit multiplication and accumulation (MAC) operations. |
format | Online Article Text |
id | pubmed-10301468 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103014682023-06-29 Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications Hu, Hongyang Feng, Chuancai Zhou, Haiyang Dong, Danian Pan, Xiaoshan Wang, Xiwei Zhang, Lu Cheng, Shuaiqi Pang, Wan Liu, Jing Micromachines (Basel) Article In recent years, digital computing in memory (CIM) has been an efficient and high-performance solution in artificial intelligence (AI) edge inference. Nevertheless, digital CIM based on non-volatile memory (NVM) is less discussed for the sophisticated intrinsic physical and electrical behavior of non-volatile devices. In this paper, we propose a fully digital non-volatile CIM (DNV-CIM) macro with compressed coding look-up table (LUT) multiplier (CCLUTM) using the 40 nm technology, which is highly compatible with the standard commodity NOR Flash memory. We also provide a continuous accumulation scheme for machine learning applications. When applied to a modified ResNet18 network trained under the CIFAR-10 dataset, the simulations indicate that the proposed CCLUTM-based DNV-CIM can achieve a peak energy efficiency of 75.18 TOPS/W with 4-bit multiplication and accumulation (MAC) operations. MDPI 2023-05-31 /pmc/articles/PMC10301468/ /pubmed/37374760 http://dx.doi.org/10.3390/mi14061175 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hu, Hongyang Feng, Chuancai Zhou, Haiyang Dong, Danian Pan, Xiaoshan Wang, Xiwei Zhang, Lu Cheng, Shuaiqi Pang, Wan Liu, Jing Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications |
title | Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications |
title_full | Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications |
title_fullStr | Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications |
title_full_unstemmed | Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications |
title_short | Simulation of a Fully Digital Computing-in-Memory for Non-Volatile Memory for Artificial Intelligence Edge Applications |
title_sort | simulation of a fully digital computing-in-memory for non-volatile memory for artificial intelligence edge applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301468/ https://www.ncbi.nlm.nih.gov/pubmed/37374760 http://dx.doi.org/10.3390/mi14061175 |
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