A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors

In this paper, a novel scheme for source/drain-first (S/D-first) full bottom dielectric isolation (BDI), i.e., Full BDI_Last, with integration of a sacrificial Si(0.5)Ge(0.5) layer was proposed and demonstrated in a stacked Si nanosheet gate-all-around (NS-GAA) device structure using TCAD simulation...

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Detalles Bibliográficos
Autores principales: Yang, Jingwen, Huang, Ziqiang, Wang, Dawei, Liu, Tao, Sun, Xin, Qian, Lewen, Pan, Zhecheng, Xu, Saisheng, Wang, Chen, Wu, Chunlei, Xu, Min, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302010/
https://www.ncbi.nlm.nih.gov/pubmed/37374692
http://dx.doi.org/10.3390/mi14061107

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