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A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers
This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The pr...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302874/ https://www.ncbi.nlm.nih.gov/pubmed/37374769 http://dx.doi.org/10.3390/mi14061184 |
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author | del Pino, Javier Khemchandani, Sunil L. San-Miguel-Montesdeoca, Mario Mateos-Angulo, Sergio Mayor-Duarte, Daniel Saiz-Perez, Jose Luis Galante-Sempere, David |
author_facet | del Pino, Javier Khemchandani, Sunil L. San-Miguel-Montesdeoca, Mario Mateos-Angulo, Sergio Mayor-Duarte, Daniel Saiz-Perez, Jose Luis Galante-Sempere, David |
author_sort | del Pino, Javier |
collection | PubMed |
description | This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The proposed architecture uses four variable gain amplifiers (VGA) that are active at any given time and are switched to generate the four quadrants. Compared to conventional architectures, this structure is more compact and produces double the output amplitude. The design offers 6-bit phase control for 360°, and the total root mean square (RMS) phase and gain errors are 2.36° and 1.46 dB, respectively. The design occupies an area of 1309.4 [Formula: see text] m × 1783.8 [Formula: see text] m (including pads). |
format | Online Article Text |
id | pubmed-10302874 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103028742023-06-29 A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers del Pino, Javier Khemchandani, Sunil L. San-Miguel-Montesdeoca, Mario Mateos-Angulo, Sergio Mayor-Duarte, Daniel Saiz-Perez, Jose Luis Galante-Sempere, David Micromachines (Basel) Article This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The proposed architecture uses four variable gain amplifiers (VGA) that are active at any given time and are switched to generate the four quadrants. Compared to conventional architectures, this structure is more compact and produces double the output amplitude. The design offers 6-bit phase control for 360°, and the total root mean square (RMS) phase and gain errors are 2.36° and 1.46 dB, respectively. The design occupies an area of 1309.4 [Formula: see text] m × 1783.8 [Formula: see text] m (including pads). MDPI 2023-05-31 /pmc/articles/PMC10302874/ /pubmed/37374769 http://dx.doi.org/10.3390/mi14061184 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article del Pino, Javier Khemchandani, Sunil L. San-Miguel-Montesdeoca, Mario Mateos-Angulo, Sergio Mayor-Duarte, Daniel Saiz-Perez, Jose Luis Galante-Sempere, David A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers |
title | A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers |
title_full | A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers |
title_fullStr | A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers |
title_full_unstemmed | A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers |
title_short | A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers |
title_sort | 17.8–20.2 ghz compact vector-sum phase shifter in 130 nm sige bicmos technology for leo gateways receivers |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302874/ https://www.ncbi.nlm.nih.gov/pubmed/37374769 http://dx.doi.org/10.3390/mi14061184 |
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