Cargando…
A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers
This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate in the 17.8 to 20.2 GHz frequency range. The pr...
Autores principales: | del Pino, Javier, Khemchandani, Sunil L., San-Miguel-Montesdeoca, Mario, Mateos-Angulo, Sergio, Mayor-Duarte, Daniel, Saiz-Perez, Jose Luis, Galante-Sempere, David |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302874/ https://www.ncbi.nlm.nih.gov/pubmed/37374769 http://dx.doi.org/10.3390/mi14061184 |
Ejemplares similares
-
BICMOS SiGe engineering run
por: Seguin-Moreau, N.
Publicado: (2018) -
Phased Array Antenna Analysis Workflow Applied to Gateways for LEO Satellite Communications
por: Merino-Fernandez, Irene, et al.
Publicado: (2022) -
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
por: Iacobucci, G., et al.
Publicado: (2021) -
Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
por: Paolozzi, L., et al.
Publicado: (2020) -
Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications
por: Martinelli, Fulvio, et al.
Publicado: (2021)