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Modelling Polarization Effects in a CdZnTe Sensor at Low Bias
Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based ap...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303174/ https://www.ncbi.nlm.nih.gov/pubmed/37420846 http://dx.doi.org/10.3390/s23125681 |
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author | Pipek, Jindřich Grill, Roman Betušiak, Marián Iniewski, Kris |
author_facet | Pipek, Jindřich Grill, Roman Betušiak, Marián Iniewski, Kris |
author_sort | Pipek, Jindřich |
collection | PubMed |
description | Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift–diffusion and Poisson’s equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum. |
format | Online Article Text |
id | pubmed-10303174 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103031742023-06-29 Modelling Polarization Effects in a CdZnTe Sensor at Low Bias Pipek, Jindřich Grill, Roman Betušiak, Marián Iniewski, Kris Sensors (Basel) Communication Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift–diffusion and Poisson’s equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum. MDPI 2023-06-17 /pmc/articles/PMC10303174/ /pubmed/37420846 http://dx.doi.org/10.3390/s23125681 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Communication Pipek, Jindřich Grill, Roman Betušiak, Marián Iniewski, Kris Modelling Polarization Effects in a CdZnTe Sensor at Low Bias |
title | Modelling Polarization Effects in a CdZnTe Sensor at Low Bias |
title_full | Modelling Polarization Effects in a CdZnTe Sensor at Low Bias |
title_fullStr | Modelling Polarization Effects in a CdZnTe Sensor at Low Bias |
title_full_unstemmed | Modelling Polarization Effects in a CdZnTe Sensor at Low Bias |
title_short | Modelling Polarization Effects in a CdZnTe Sensor at Low Bias |
title_sort | modelling polarization effects in a cdznte sensor at low bias |
topic | Communication |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303174/ https://www.ncbi.nlm.nih.gov/pubmed/37420846 http://dx.doi.org/10.3390/s23125681 |
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