Tailoring SnO(2) Defect States and Structure: Reviewing Bottom-Up Approaches to Control Size, Morphology, Electronic and Electrochemical Properties for Application in Batteries

Tin oxide (SnO(2)) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that varies as a function of its polymorph, i.e., rutile, cubic or orthorhombic. In this review, we survey the crystal and electronic structures, bandgap and defect states of SnO(2). Subsequently, the significance o...

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Detalles Bibliográficos
Autores principales: Ponte, Reynald, Rauwel, Erwan, Rauwel, Protima
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303380/
https://www.ncbi.nlm.nih.gov/pubmed/37374523
http://dx.doi.org/10.3390/ma16124339

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303380/
https://www.ncbi.nlm.nih.gov/pubmed/37374523
http://dx.doi.org/10.3390/ma16124339

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