GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (R(on,sp)) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high-electric-field region to the low-electric-field region and improves the BV compared with conventional Si VDMOS. The results of the TCAD simulation show that the optimized BV of the proposed GaN/Si VDMOS increases from 374 V to 2029 V compared with the conventional Si VDMOS with the same drift region length of 20 μm, and the R(on,sp) of 17.2 mΩ·cm(2) is lower than 36.5 mΩ·cm(2) for the conventional Si VDMOS. Due to the introduction of the GaN/Si heterojunction, the breakdown point is transferred by BPT from the higher-electric-field region with the largest radius of curvature to the low-electric-field region. The interfacial state effects of the GaN/Si are analyzed to guide the fabrication of the GaN/Si heterojunction MOSFETs.