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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (R(on,sp)) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high-electric-field region to the low-electric-field...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10304243/ https://www.ncbi.nlm.nih.gov/pubmed/37374753 http://dx.doi.org/10.3390/mi14061166 |