A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT

To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this p...

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Detalles Bibliográficos
Autores principales: Li, Jiaxuan, Yuan, Yang, Yuan, Bin, Fan, Jingxin, Zeng, Jialong, Yu, Zhongjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305170/
https://www.ncbi.nlm.nih.gov/pubmed/37374861
http://dx.doi.org/10.3390/mi14061276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305170/
https://www.ncbi.nlm.nih.gov/pubmed/37374861
http://dx.doi.org/10.3390/mi14061276

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