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Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles
In special applications in nuclear reactors and deep space environments, gallium nitride detectors are subject to irradiation by α-particles. Therefore, this work aims to explore the mechanism of the property change of GaN material, which is closely related to the application of semiconductor materi...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305394/ https://www.ncbi.nlm.nih.gov/pubmed/37374407 http://dx.doi.org/10.3390/ma16124224 |
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author | Liu, Yang Xiong, Zhenpeng Ouyang, Xiaoping |
author_facet | Liu, Yang Xiong, Zhenpeng Ouyang, Xiaoping |
author_sort | Liu, Yang |
collection | PubMed |
description | In special applications in nuclear reactors and deep space environments, gallium nitride detectors are subject to irradiation by α-particles. Therefore, this work aims to explore the mechanism of the property change of GaN material, which is closely related to the application of semiconductor materials in detectors. This study applied molecular dynamics methods to the displacement damage of GaN under α-particle irradiation. A single α-particle-induced cascade collision at two incident energies (0.1 and 0.5 MeV) and multiple α-particle injections (by five and ten incident α-particles with injection doses of 2 × 10(12) and 4 × 10(12) ions/cm(2), respectively) at room temperature (300 K) were simulated by LAMMPS code. The results show that the recombination efficiency of the material is about 32% under 0.1 MeV, and most of the defect clusters are located within 125 Å, while the recombination efficiency of 0.5 MeV is about 26%, and most of the defect clusters are outside 125 Å. However, under multiple α-particle injections, the material structure changes, the amorphous regions become larger and more numerous, the proportion of amorphous area is about 27.3% to 31.9%, while the material’s self-repair ability is mostly exhausted. |
format | Online Article Text |
id | pubmed-10305394 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-103053942023-06-29 Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles Liu, Yang Xiong, Zhenpeng Ouyang, Xiaoping Materials (Basel) Article In special applications in nuclear reactors and deep space environments, gallium nitride detectors are subject to irradiation by α-particles. Therefore, this work aims to explore the mechanism of the property change of GaN material, which is closely related to the application of semiconductor materials in detectors. This study applied molecular dynamics methods to the displacement damage of GaN under α-particle irradiation. A single α-particle-induced cascade collision at two incident energies (0.1 and 0.5 MeV) and multiple α-particle injections (by five and ten incident α-particles with injection doses of 2 × 10(12) and 4 × 10(12) ions/cm(2), respectively) at room temperature (300 K) were simulated by LAMMPS code. The results show that the recombination efficiency of the material is about 32% under 0.1 MeV, and most of the defect clusters are located within 125 Å, while the recombination efficiency of 0.5 MeV is about 26%, and most of the defect clusters are outside 125 Å. However, under multiple α-particle injections, the material structure changes, the amorphous regions become larger and more numerous, the proportion of amorphous area is about 27.3% to 31.9%, while the material’s self-repair ability is mostly exhausted. MDPI 2023-06-07 /pmc/articles/PMC10305394/ /pubmed/37374407 http://dx.doi.org/10.3390/ma16124224 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Liu, Yang Xiong, Zhenpeng Ouyang, Xiaoping Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles |
title | Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles |
title_full | Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles |
title_fullStr | Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles |
title_full_unstemmed | Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles |
title_short | Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles |
title_sort | molecular dynamics study on the mechanism of gallium nitride radiation damage by alpha particles |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305394/ https://www.ncbi.nlm.nih.gov/pubmed/37374407 http://dx.doi.org/10.3390/ma16124224 |
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