Improving Performance of Al(2)O(3)/AlN/GaN MIS HEMTs via In Situ N(2) Plasma Annealing

A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al(2)O(3)/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD)...

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Detalles Bibliográficos
Autores principales: Sun, Mengyuan, Wang, Luyu, Zhang, Penghao, Chen, Kun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305523/
https://www.ncbi.nlm.nih.gov/pubmed/37374685
http://dx.doi.org/10.3390/mi14061100

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305523/
https://www.ncbi.nlm.nih.gov/pubmed/37374685
http://dx.doi.org/10.3390/mi14061100

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