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Improving Performance of Al(2)O(3)/AlN/GaN MIS HEMTs via In Situ N(2) Plasma Annealing
A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al(2)O(3)/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD)...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305523/ https://www.ncbi.nlm.nih.gov/pubmed/37374685 http://dx.doi.org/10.3390/mi14061100 |