Cargando…
Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures
[Image: see text] van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a...
Autores principales: | , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10311587/ https://www.ncbi.nlm.nih.gov/pubmed/37319105 http://dx.doi.org/10.1021/acsnano.3c03261 |
_version_ | 1785066773207318528 |
---|---|
author | Ramsden, Hugh Sarkar, Soumya Wang, Yan Zhu, Yiru Kerfoot, James Alexeev, Evgeny M. Taniguchi, Takashi Watanabe, Kenji Tongay, Sefaattin Ferrari, Andrea C. Chhowalla, Manish |
author_facet | Ramsden, Hugh Sarkar, Soumya Wang, Yan Zhu, Yiru Kerfoot, James Alexeev, Evgeny M. Taniguchi, Takashi Watanabe, Kenji Tongay, Sefaattin Ferrari, Andrea C. Chhowalla, Manish |
author_sort | Ramsden, Hugh |
collection | PubMed |
description | [Image: see text] van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a device, adversely affecting macroscale performance. Here, we use conductive mode and cathodoluminescence scanning electron microscopy (CM-SEM and SEM-CL) to investigate these phenomena. As a model system, we use a monolayer WSe(2) (1L-WSe(2)) encapsulated in hexagonal boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons during the SEM measurements. During electron irradiation at 5 keV, up to 70% of beam electrons are deposited into the vdW-HS and can subsequently migrate to the 1L-WSe(2). This accumulation of charge leads to dynamic doping of 1L-WSe(2), reducing its CL efficiency by up to 30% over 30 s. By providing a path for excess electrons to leave the sample, near full restoration of the initial CL signal can be achieved. These results indicate that the trapping of charges in vdW-HSs during electron irradiation must be considered, in order to obtain and maintain optimal performance of vdW-HS devices during processes such as e-beam lithography or SEM. Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterization of vdW-HS devices can be performed, allowing electrical and optical properties to be correlated. |
format | Online Article Text |
id | pubmed-10311587 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-103115872023-07-01 Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures Ramsden, Hugh Sarkar, Soumya Wang, Yan Zhu, Yiru Kerfoot, James Alexeev, Evgeny M. Taniguchi, Takashi Watanabe, Kenji Tongay, Sefaattin Ferrari, Andrea C. Chhowalla, Manish ACS Nano [Image: see text] van der Waals heterostructures (vdW-HSs) integrate dissimilar materials to form complex devices. These rely on the manipulation of charges at multiple interfaces. However, at present, submicrometer variations in strain, doping, or electrical breakages may exist undetected within a device, adversely affecting macroscale performance. Here, we use conductive mode and cathodoluminescence scanning electron microscopy (CM-SEM and SEM-CL) to investigate these phenomena. As a model system, we use a monolayer WSe(2) (1L-WSe(2)) encapsulated in hexagonal boron nitride (hBN). CM-SEM allows for quantification of the flow of electrons during the SEM measurements. During electron irradiation at 5 keV, up to 70% of beam electrons are deposited into the vdW-HS and can subsequently migrate to the 1L-WSe(2). This accumulation of charge leads to dynamic doping of 1L-WSe(2), reducing its CL efficiency by up to 30% over 30 s. By providing a path for excess electrons to leave the sample, near full restoration of the initial CL signal can be achieved. These results indicate that the trapping of charges in vdW-HSs during electron irradiation must be considered, in order to obtain and maintain optimal performance of vdW-HS devices during processes such as e-beam lithography or SEM. Thus, CM-SEM and SEM-CL form a toolkit through which nanoscale characterization of vdW-HS devices can be performed, allowing electrical and optical properties to be correlated. American Chemical Society 2023-06-15 /pmc/articles/PMC10311587/ /pubmed/37319105 http://dx.doi.org/10.1021/acsnano.3c03261 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Ramsden, Hugh Sarkar, Soumya Wang, Yan Zhu, Yiru Kerfoot, James Alexeev, Evgeny M. Taniguchi, Takashi Watanabe, Kenji Tongay, Sefaattin Ferrari, Andrea C. Chhowalla, Manish Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron Microscopy of van der Waals Heterostructures |
title | Nanoscale Cathodoluminescence
and Conductive Mode
Scanning Electron Microscopy of van der Waals Heterostructures |
title_full | Nanoscale Cathodoluminescence
and Conductive Mode
Scanning Electron Microscopy of van der Waals Heterostructures |
title_fullStr | Nanoscale Cathodoluminescence
and Conductive Mode
Scanning Electron Microscopy of van der Waals Heterostructures |
title_full_unstemmed | Nanoscale Cathodoluminescence
and Conductive Mode
Scanning Electron Microscopy of van der Waals Heterostructures |
title_short | Nanoscale Cathodoluminescence
and Conductive Mode
Scanning Electron Microscopy of van der Waals Heterostructures |
title_sort | nanoscale cathodoluminescence
and conductive mode
scanning electron microscopy of van der waals heterostructures |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10311587/ https://www.ncbi.nlm.nih.gov/pubmed/37319105 http://dx.doi.org/10.1021/acsnano.3c03261 |
work_keys_str_mv | AT ramsdenhugh nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT sarkarsoumya nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT wangyan nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT zhuyiru nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT kerfootjames nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT alexeevevgenym nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT taniguchitakashi nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT watanabekenji nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT tongaysefaattin nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT ferrariandreac nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures AT chhowallamanish nanoscalecathodoluminescenceandconductivemodescanningelectronmicroscopyofvanderwaalsheterostructures |