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Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films
[Image: see text] Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Bla...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10316405/ https://www.ncbi.nlm.nih.gov/pubmed/37319383 http://dx.doi.org/10.1021/acsami.3c02057 |
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author | Nowik-Boltyk, Ewa Malgorzata Junghoefer, Tobias Glaser, Mathias Giangrisostomi, Erika Ovsyannikov, Ruslan Zhang, Shuyang Shu, Chan Rajca, Andrzej Calzolari, Arrigo Casu, M. Benedetta |
author_facet | Nowik-Boltyk, Ewa Malgorzata Junghoefer, Tobias Glaser, Mathias Giangrisostomi, Erika Ovsyannikov, Ruslan Zhang, Shuyang Shu, Chan Rajca, Andrzej Calzolari, Arrigo Casu, M. Benedetta |
author_sort | Nowik-Boltyk, Ewa Malgorzata |
collection | PubMed |
description | [Image: see text] Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Blatter radical derivatives. We find that the interaction with different contaminants (such as atomic H, Ar, N, and O and molecular H(2), N(2), O(2), H(2)O, and NH(2)) affects the chemical and magnetic properties of the thin films upon air exposure. Also, the radical-specific site, where the contaminant interaction takes place, plays a role. Atomic H and NH(2) are detrimental to the magnetic properties of Blatter radicals, while the presence of molecular water influences more specifically the magnetic properties of the diradical thin films, and it is believed to be the major cause of the shorter diradical thin film lifetime in air. |
format | Online Article Text |
id | pubmed-10316405 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-103164052023-07-04 Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films Nowik-Boltyk, Ewa Malgorzata Junghoefer, Tobias Glaser, Mathias Giangrisostomi, Erika Ovsyannikov, Ruslan Zhang, Shuyang Shu, Chan Rajca, Andrzej Calzolari, Arrigo Casu, M. Benedetta ACS Appl Mater Interfaces [Image: see text] Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Blatter radical derivatives. We find that the interaction with different contaminants (such as atomic H, Ar, N, and O and molecular H(2), N(2), O(2), H(2)O, and NH(2)) affects the chemical and magnetic properties of the thin films upon air exposure. Also, the radical-specific site, where the contaminant interaction takes place, plays a role. Atomic H and NH(2) are detrimental to the magnetic properties of Blatter radicals, while the presence of molecular water influences more specifically the magnetic properties of the diradical thin films, and it is believed to be the major cause of the shorter diradical thin film lifetime in air. American Chemical Society 2023-06-15 /pmc/articles/PMC10316405/ /pubmed/37319383 http://dx.doi.org/10.1021/acsami.3c02057 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Nowik-Boltyk, Ewa Malgorzata Junghoefer, Tobias Glaser, Mathias Giangrisostomi, Erika Ovsyannikov, Ruslan Zhang, Shuyang Shu, Chan Rajca, Andrzej Calzolari, Arrigo Casu, M. Benedetta Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films |
title | Long-Term
Degradation Mechanisms in Application-Implemented
Radical Thin Films |
title_full | Long-Term
Degradation Mechanisms in Application-Implemented
Radical Thin Films |
title_fullStr | Long-Term
Degradation Mechanisms in Application-Implemented
Radical Thin Films |
title_full_unstemmed | Long-Term
Degradation Mechanisms in Application-Implemented
Radical Thin Films |
title_short | Long-Term
Degradation Mechanisms in Application-Implemented
Radical Thin Films |
title_sort | long-term
degradation mechanisms in application-implemented
radical thin films |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10316405/ https://www.ncbi.nlm.nih.gov/pubmed/37319383 http://dx.doi.org/10.1021/acsami.3c02057 |
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