Cargando…

Defects boost graphitization for highly conductive graphene films

Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystalliza...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Qing, Wei, Qinwei, Huang, Kun, Liu, Zhibo, Ma, Wei, Zhang, Zehui, Zhang, Yanfeng, Cheng, Hui-Ming, Ren, Wencai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Oxford University Press 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10319761/
https://www.ncbi.nlm.nih.gov/pubmed/37416318
http://dx.doi.org/10.1093/nsr/nwad147
_version_ 1785068308706361344
author Zhang, Qing
Wei, Qinwei
Huang, Kun
Liu, Zhibo
Ma, Wei
Zhang, Zehui
Zhang, Yanfeng
Cheng, Hui-Ming
Ren, Wencai
author_facet Zhang, Qing
Wei, Qinwei
Huang, Kun
Liu, Zhibo
Ma, Wei
Zhang, Zehui
Zhang, Yanfeng
Cheng, Hui-Ming
Ren, Wencai
author_sort Zhang, Qing
collection PubMed
description Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials, where defects are gradually removed with increasing temperature. However, when using graphene materials as precursors, including graphene oxide, reduced graphene oxide and pristine graphene, even lengthy graphitization at 3000°C can only produce graphene films with small grain sizes and abundant structural disorders, which limit their conductivities. Here, we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization, enabling ideal AB stacking as well as a 100-fold, 64-fold and 28-fold improvement in grain size, electrical conductivity and thermal conductivity, respectively, between 2000°C and 3000°C. This process is realized by nitrogen doping, which retards the lattice restoration of defective graphene, retaining abundant defects such as vacancies, dislocations and grain boundaries in graphene films at a high temperature. With this approach, a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated, with electrical and thermal conductivities (∼2.0 × 10(4) S cm(−1); ∼1.7 × 10(3) W m(−1) K(−1)) that are improved by about 6- and 2-fold, respectively, compared to those of the graphene films fabricated by graphene oxide. Such graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of ∼90 dB at a thickness of 10 μm, outperforming all the synthetic materials of comparable thickness including MXene films. This work not only paves the way for the technological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphene fibers, carbon nanotube fibers, carbon fibers, polymer-derived graphite and highly oriented pyrolytic graphite.
format Online
Article
Text
id pubmed-10319761
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher Oxford University Press
record_format MEDLINE/PubMed
spelling pubmed-103197612023-07-06 Defects boost graphitization for highly conductive graphene films Zhang, Qing Wei, Qinwei Huang, Kun Liu, Zhibo Ma, Wei Zhang, Zehui Zhang, Yanfeng Cheng, Hui-Ming Ren, Wencai Natl Sci Rev Research Article Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials, where defects are gradually removed with increasing temperature. However, when using graphene materials as precursors, including graphene oxide, reduced graphene oxide and pristine graphene, even lengthy graphitization at 3000°C can only produce graphene films with small grain sizes and abundant structural disorders, which limit their conductivities. Here, we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization, enabling ideal AB stacking as well as a 100-fold, 64-fold and 28-fold improvement in grain size, electrical conductivity and thermal conductivity, respectively, between 2000°C and 3000°C. This process is realized by nitrogen doping, which retards the lattice restoration of defective graphene, retaining abundant defects such as vacancies, dislocations and grain boundaries in graphene films at a high temperature. With this approach, a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated, with electrical and thermal conductivities (∼2.0 × 10(4) S cm(−1); ∼1.7 × 10(3) W m(−1) K(−1)) that are improved by about 6- and 2-fold, respectively, compared to those of the graphene films fabricated by graphene oxide. Such graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of ∼90 dB at a thickness of 10 μm, outperforming all the synthetic materials of comparable thickness including MXene films. This work not only paves the way for the technological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphene fibers, carbon nanotube fibers, carbon fibers, polymer-derived graphite and highly oriented pyrolytic graphite. Oxford University Press 2023-05-19 /pmc/articles/PMC10319761/ /pubmed/37416318 http://dx.doi.org/10.1093/nsr/nwad147 Text en © The Author(s) 2023. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. https://creativecommons.org/licenses/by/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Article
Zhang, Qing
Wei, Qinwei
Huang, Kun
Liu, Zhibo
Ma, Wei
Zhang, Zehui
Zhang, Yanfeng
Cheng, Hui-Ming
Ren, Wencai
Defects boost graphitization for highly conductive graphene films
title Defects boost graphitization for highly conductive graphene films
title_full Defects boost graphitization for highly conductive graphene films
title_fullStr Defects boost graphitization for highly conductive graphene films
title_full_unstemmed Defects boost graphitization for highly conductive graphene films
title_short Defects boost graphitization for highly conductive graphene films
title_sort defects boost graphitization for highly conductive graphene films
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10319761/
https://www.ncbi.nlm.nih.gov/pubmed/37416318
http://dx.doi.org/10.1093/nsr/nwad147
work_keys_str_mv AT zhangqing defectsboostgraphitizationforhighlyconductivegraphenefilms
AT weiqinwei defectsboostgraphitizationforhighlyconductivegraphenefilms
AT huangkun defectsboostgraphitizationforhighlyconductivegraphenefilms
AT liuzhibo defectsboostgraphitizationforhighlyconductivegraphenefilms
AT mawei defectsboostgraphitizationforhighlyconductivegraphenefilms
AT zhangzehui defectsboostgraphitizationforhighlyconductivegraphenefilms
AT zhangyanfeng defectsboostgraphitizationforhighlyconductivegraphenefilms
AT chenghuiming defectsboostgraphitizationforhighlyconductivegraphenefilms
AT renwencai defectsboostgraphitizationforhighlyconductivegraphenefilms