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Defects boost graphitization for highly conductive graphene films
Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystalliza...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Oxford University Press
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10319761/ https://www.ncbi.nlm.nih.gov/pubmed/37416318 http://dx.doi.org/10.1093/nsr/nwad147 |
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author | Zhang, Qing Wei, Qinwei Huang, Kun Liu, Zhibo Ma, Wei Zhang, Zehui Zhang, Yanfeng Cheng, Hui-Ming Ren, Wencai |
author_facet | Zhang, Qing Wei, Qinwei Huang, Kun Liu, Zhibo Ma, Wei Zhang, Zehui Zhang, Yanfeng Cheng, Hui-Ming Ren, Wencai |
author_sort | Zhang, Qing |
collection | PubMed |
description | Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials, where defects are gradually removed with increasing temperature. However, when using graphene materials as precursors, including graphene oxide, reduced graphene oxide and pristine graphene, even lengthy graphitization at 3000°C can only produce graphene films with small grain sizes and abundant structural disorders, which limit their conductivities. Here, we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization, enabling ideal AB stacking as well as a 100-fold, 64-fold and 28-fold improvement in grain size, electrical conductivity and thermal conductivity, respectively, between 2000°C and 3000°C. This process is realized by nitrogen doping, which retards the lattice restoration of defective graphene, retaining abundant defects such as vacancies, dislocations and grain boundaries in graphene films at a high temperature. With this approach, a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated, with electrical and thermal conductivities (∼2.0 × 10(4) S cm(−1); ∼1.7 × 10(3) W m(−1) K(−1)) that are improved by about 6- and 2-fold, respectively, compared to those of the graphene films fabricated by graphene oxide. Such graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of ∼90 dB at a thickness of 10 μm, outperforming all the synthetic materials of comparable thickness including MXene films. This work not only paves the way for the technological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphene fibers, carbon nanotube fibers, carbon fibers, polymer-derived graphite and highly oriented pyrolytic graphite. |
format | Online Article Text |
id | pubmed-10319761 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Oxford University Press |
record_format | MEDLINE/PubMed |
spelling | pubmed-103197612023-07-06 Defects boost graphitization for highly conductive graphene films Zhang, Qing Wei, Qinwei Huang, Kun Liu, Zhibo Ma, Wei Zhang, Zehui Zhang, Yanfeng Cheng, Hui-Ming Ren, Wencai Natl Sci Rev Research Article Fabricating highly crystalline macroscopic films with extraordinary electrical and thermal conductivities from graphene sheets is essential for applications in electronics, telecommunications and thermal management. High-temperature graphitization is the only method known to date for the crystallization of all types of carbon materials, where defects are gradually removed with increasing temperature. However, when using graphene materials as precursors, including graphene oxide, reduced graphene oxide and pristine graphene, even lengthy graphitization at 3000°C can only produce graphene films with small grain sizes and abundant structural disorders, which limit their conductivities. Here, we show that high-temperature defects substantially accelerate the grain growth and ordering of graphene films during graphitization, enabling ideal AB stacking as well as a 100-fold, 64-fold and 28-fold improvement in grain size, electrical conductivity and thermal conductivity, respectively, between 2000°C and 3000°C. This process is realized by nitrogen doping, which retards the lattice restoration of defective graphene, retaining abundant defects such as vacancies, dislocations and grain boundaries in graphene films at a high temperature. With this approach, a highly ordered crystalline graphene film similar to highly oriented pyrolytic graphite is fabricated, with electrical and thermal conductivities (∼2.0 × 10(4) S cm(−1); ∼1.7 × 10(3) W m(−1) K(−1)) that are improved by about 6- and 2-fold, respectively, compared to those of the graphene films fabricated by graphene oxide. Such graphene film also exhibits a superhigh electromagnetic interference shielding effectiveness of ∼90 dB at a thickness of 10 μm, outperforming all the synthetic materials of comparable thickness including MXene films. This work not only paves the way for the technological application of highly conductive graphene films but also provides a general strategy to efficiently improve the synthesis and properties of other carbon materials such as graphene fibers, carbon nanotube fibers, carbon fibers, polymer-derived graphite and highly oriented pyrolytic graphite. Oxford University Press 2023-05-19 /pmc/articles/PMC10319761/ /pubmed/37416318 http://dx.doi.org/10.1093/nsr/nwad147 Text en © The Author(s) 2023. Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. https://creativecommons.org/licenses/by/4.0/This is an Open Access article distributed under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Article Zhang, Qing Wei, Qinwei Huang, Kun Liu, Zhibo Ma, Wei Zhang, Zehui Zhang, Yanfeng Cheng, Hui-Ming Ren, Wencai Defects boost graphitization for highly conductive graphene films |
title | Defects boost graphitization for highly conductive graphene films |
title_full | Defects boost graphitization for highly conductive graphene films |
title_fullStr | Defects boost graphitization for highly conductive graphene films |
title_full_unstemmed | Defects boost graphitization for highly conductive graphene films |
title_short | Defects boost graphitization for highly conductive graphene films |
title_sort | defects boost graphitization for highly conductive graphene films |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10319761/ https://www.ncbi.nlm.nih.gov/pubmed/37416318 http://dx.doi.org/10.1093/nsr/nwad147 |
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