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Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate

Vertically aligned zinc oxide nanorod (ZnO-NR) growth was achieved through a wet chemical route over a comb-shaped working area of an interdigitated Ag–Pd alloy signal electrode. Field-emission scanning electron microscopy images confirmed the formation of homogeneous ZnO-NRs grown uniformly over th...

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Autores principales: Hayat, Khizar, Ali, Zubair, Tirth, Vineet, Algahtani, Ali, Al-Mughanam, Tawfiq, Alghtani, Abdulaziz H., Alrobei, Hussein, Shah, Abdullah, Ahmed, Ejaz, Shah, Said Karim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10320435/
https://www.ncbi.nlm.nih.gov/pubmed/37416915
http://dx.doi.org/10.1039/d3ra03319h
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author Hayat, Khizar
Ali, Zubair
Tirth, Vineet
Algahtani, Ali
Al-Mughanam, Tawfiq
Alghtani, Abdulaziz H.
Alrobei, Hussein
Shah, Abdullah
Ahmed, Ejaz
Shah, Said Karim
author_facet Hayat, Khizar
Ali, Zubair
Tirth, Vineet
Algahtani, Ali
Al-Mughanam, Tawfiq
Alghtani, Abdulaziz H.
Alrobei, Hussein
Shah, Abdullah
Ahmed, Ejaz
Shah, Said Karim
author_sort Hayat, Khizar
collection PubMed
description Vertically aligned zinc oxide nanorod (ZnO-NR) growth was achieved through a wet chemical route over a comb-shaped working area of an interdigitated Ag–Pd alloy signal electrode. Field-emission scanning electron microscopy images confirmed the formation of homogeneous ZnO-NRs grown uniformly over the working area. X-ray diffraction revealed single-phase formation of ZnO-NRs, further confirmed by energy-dispersive X-ray spectroscopy analysis. Temperature-dependent impedance and modulus formalisms showed semiconductor-type behavior of ZnO-NRs. Two electro-active regions i.e., grain and grain boundary, were investigated which have activation energy ∼0.11 eV and ∼0.17 eV, respectively. The conduction mechanism was investigated in both regions using temperature-dependent AC conductivity analysis. In the low-frequency dispersion region, the dominant conduction is due to small polarons, which is attributed to the grain boundary response. At the same time, the correlated barrier hopping mechanism is a possible conduction mechanism in the high dispersion region attributed to the bulk/grain response. Moreover, substantial photoconductivity under UV light illumination was achieved which can be attributed to the high surface-to-volume ratio of zinc oxide nanorods as they provide high density of trap states which causes an increase in the carrier injection and movement leading to persistent photoconductivity. This photoconductivity was also facilitated by the frequency sweep applied to the sample which suggests the investigated ZnO nanorods based IDE devices can be useful for the application of efficient UV detectors. Experimental values of field lowering coefficient (β(exp)) matched well with the theoretical value of β(S) which suggests that the possible operating conduction mechanism in ZnO nanorods is Schottky type. I–V characteristics showed that the significantly high photoconductivity of ZnO-NRs as a result of UV light illumination is owing to the increase in number of free charge carriers as a result of generation of electron–hole pairs by absorption of UV light photons.
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spelling pubmed-103204352023-07-06 Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate Hayat, Khizar Ali, Zubair Tirth, Vineet Algahtani, Ali Al-Mughanam, Tawfiq Alghtani, Abdulaziz H. Alrobei, Hussein Shah, Abdullah Ahmed, Ejaz Shah, Said Karim RSC Adv Chemistry Vertically aligned zinc oxide nanorod (ZnO-NR) growth was achieved through a wet chemical route over a comb-shaped working area of an interdigitated Ag–Pd alloy signal electrode. Field-emission scanning electron microscopy images confirmed the formation of homogeneous ZnO-NRs grown uniformly over the working area. X-ray diffraction revealed single-phase formation of ZnO-NRs, further confirmed by energy-dispersive X-ray spectroscopy analysis. Temperature-dependent impedance and modulus formalisms showed semiconductor-type behavior of ZnO-NRs. Two electro-active regions i.e., grain and grain boundary, were investigated which have activation energy ∼0.11 eV and ∼0.17 eV, respectively. The conduction mechanism was investigated in both regions using temperature-dependent AC conductivity analysis. In the low-frequency dispersion region, the dominant conduction is due to small polarons, which is attributed to the grain boundary response. At the same time, the correlated barrier hopping mechanism is a possible conduction mechanism in the high dispersion region attributed to the bulk/grain response. Moreover, substantial photoconductivity under UV light illumination was achieved which can be attributed to the high surface-to-volume ratio of zinc oxide nanorods as they provide high density of trap states which causes an increase in the carrier injection and movement leading to persistent photoconductivity. This photoconductivity was also facilitated by the frequency sweep applied to the sample which suggests the investigated ZnO nanorods based IDE devices can be useful for the application of efficient UV detectors. Experimental values of field lowering coefficient (β(exp)) matched well with the theoretical value of β(S) which suggests that the possible operating conduction mechanism in ZnO nanorods is Schottky type. I–V characteristics showed that the significantly high photoconductivity of ZnO-NRs as a result of UV light illumination is owing to the increase in number of free charge carriers as a result of generation of electron–hole pairs by absorption of UV light photons. The Royal Society of Chemistry 2023-07-05 /pmc/articles/PMC10320435/ /pubmed/37416915 http://dx.doi.org/10.1039/d3ra03319h Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Hayat, Khizar
Ali, Zubair
Tirth, Vineet
Algahtani, Ali
Al-Mughanam, Tawfiq
Alghtani, Abdulaziz H.
Alrobei, Hussein
Shah, Abdullah
Ahmed, Ejaz
Shah, Said Karim
Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate
title Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate
title_full Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate
title_fullStr Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate
title_full_unstemmed Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate
title_short Investigation of conduction mechanism and UV light response of vertically grown ZnO nanorods on an interdigitated electrode substrate
title_sort investigation of conduction mechanism and uv light response of vertically grown zno nanorods on an interdigitated electrode substrate
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10320435/
https://www.ncbi.nlm.nih.gov/pubmed/37416915
http://dx.doi.org/10.1039/d3ra03319h
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